Super Low Gate Charge
100% EAS Guaranteed
Green Device Available
Excellent CdV/dt effect decline
Advanced high cell density
TrenchtechnologyProduct SummaryBVDSSRDSONID30V7.6mΩ50ADescriptionThe AP50N03 is the high cell density trenchedN-ch MOSFETs, which provide excellent RDSONand gate charge for most of the synchronous buckconverter applications.The meet the RoHS and GreenProduct requirement, 100% EAS guaranteed withfull function reliability approved.
